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arXiv 提交日期: 2026-03-24
📄 Abstract - Wafer-Level Etch Spatial Profiling for Process Monitoring from Time-Series with Time-LLM

Understanding wafer-level spatial variations from in-situ process signals is essential for advanced plasma etching process monitoring. While most data-driven approaches focus on scalar indicators such as average etch rate, actual process quality is determined by complex two-dimensional spatial distributions across the wafer. This paper presents a spatial regression model that predicts wafer-level etch depth distributions directly from multichannel in-situ process time series. We propose a Time-LLM-based spatial regression model that extends LLM reprogramming from conventional time-series forecasting to wafer-level spatial estimation by redesigning the input embedding and output projection. Using the BOSCH plasma-etching dataset, we demonstrate stable performance under data-limited conditions, supporting the feasibility of LLM-based reprogramming for wafer-level spatial monitoring.

顶级标签: llm model training systems
详细标签: time-series analysis spatial regression process monitoring semiconductor manufacturing llm reprogramming 或 搜索:

基于Time-LLM的时间序列晶圆级刻蚀空间分布剖面用于工艺监控 / Wafer-Level Etch Spatial Profiling for Process Monitoring from Time-Series with Time-LLM


1️⃣ 一句话总结

这篇论文提出了一种基于大语言模型(Time-LLM)的新方法,能够直接利用生产过程中的多通道时间序列数据,来预测整个晶圆上刻蚀深度的二维空间分布,从而实现对等离子刻蚀工艺更精细、更有效的监控。

源自 arXiv: 2603.23576